| PART |
Description |
Maker |
| BF996S |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
Philips Semiconductors
|
| BF998WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF994S BF994 |
N-channel dual-gate MOS-FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 3SK322 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| BF982 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
ETC
|
| 3SK297ZP-TL-E 3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| 3SK321 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK298 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| 3SK317 |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| BF997 |
N-channel dual-gate MOS-FET
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF991 BF991-2015 |
N-channel dual-gate MOS-FET
N-channel dual-gate MOSFET
|
Quanzhou Jinmei Electronic ...
NXP Semiconductors
|
